Vishay SQ2318BES Type N-Channel MOSFET, 8 A, 40 V Enhancement, 3-Pin SOT-23 SQ2318BES-T1_GE3
- RS Stock No.:
- 210-5022
- Mfr. Part No.:
- SQ2318BES-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP520.58
(exc. VAT)
PHP583.04
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- 80 left, ready to ship from another location
- Final 100 unit(s) shipping from January 07, 2026
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP26.029 | PHP520.58 |
| 40 - 80 | PHP23.426 | PHP468.52 |
| 100 - 480 | PHP21.084 | PHP421.68 |
| 500 - 980 | PHP18.975 | PHP379.50 |
| 1000 + | PHP17.077 | PHP341.54 |
*price indicative
- RS Stock No.:
- 210-5022
- Mfr. Part No.:
- SQ2318BES-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-23 | |
| Series | SQ2318BES | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-23 | ||
Series SQ2318BES | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Length 3.04mm | ||
Automotive Standard No | ||
The Vishay Automotive N-Channel 40 V (D-S) 175 °C MOSFET has SOT-23 package type.
AEC-Q101 qualified
100 % Rg and UIS tested
RoHS compliant
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