Vishay TrenchFET Type P-Channel MOSFET, 7.2 A, 40 V Enhancement, 8-Pin SO-8 SI4447ADY-T1-GE3

RS Stock No.:: 180-7948
Mfr. Part No.:: SI4447ADY-T1-GE3
Manufacturer:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 7.2 A, 40 V Enhancement, 8-Pin SO-8 SI4447ADY-T1-GE3

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Subtotal (1 pack of 20 units)*

PHP588.00

(exc. VAT)

PHP658.60

(inc. VAT)

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In Stock

20 unit(s) ready to ship from another location
Plus 3,240 unit(s) shipping from January 02, 2026

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Units	Per Unit	Per Pack*
20 - 20	PHP29.40	PHP588.00
40 - 80	PHP28.518	PHP570.36
100 - 480	PHP26.807	PHP536.14
500 - 980	PHP24.394	PHP487.88
1000 +	PHP21.467	PHP429.34

*price indicative

RS Stock No.:: 180-7948
Mfr. Part No.:: SI4447ADY-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	7.2A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	62mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	11.8nC
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	2.7W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.75mm
	Length	5mm
	Width	6.2 mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 7.2A
	Maximum Drain Source Voltage Vds 40V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 62mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 11.8nC
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 2.7W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.75mm
	Length 5mm
	Width 6.2 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 45mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 4.2W and continuous drain current of 7.2A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switch

• Load switches

• Notebook PCs

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested