Vishay TrenchFET Type P-Channel MOSFET, 36 A, 30 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 2500 units)*

PHP173,020.00

(exc. VAT)

PHP193,782.50

(inc. VAT)

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Units
Per Unit
Per Reel*
2500 +PHP69.208PHP173,020.00

*price indicative

RS Stock No.:
180-7292
Mfr. Part No.:
SI4497DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.6mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

129nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

5W

Maximum Operating Temperature

150°C

Width

6.2 mm

Length

5mm

Height

1.75mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.3mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 7.8W and continuous drain current of 36A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications


• Adaptor switch

• High current load switch

• Notebook

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested

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