Vishay Type N-Channel MOSFET, 12 A, 30 V, 8-Pin PowerPAK 1212-8 SIS412DN-T1-GE3

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Subtotal (1 pack of 20 units)*

PHP660.24

(exc. VAT)

PHP739.46

(inc. VAT)

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Units
Per Unit
Per Pack*
20 - 20PHP33.012PHP660.24
40 - 80PHP32.022PHP640.44
100 - 480PHP31.061PHP621.22
500 - 980PHP30.13PHP602.60
1000 +PHP29.226PHP584.52

*price indicative

Packaging Options:
RS Stock No.:
180-7909
Mfr. Part No.:
SIS412DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.03Ω

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

15.6W

Typical Gate Charge Qg @ Vgs

3.8nC

Maximum Operating Temperature

150°C

Length

3.61mm

Standards/Approvals

IEC 61249-2-21

Height

0.79mm

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay MOSFET is an N-channel, PowerPAK-1212-8 package is a new age product with a drain-source voltage of 30V and maximum gate-source voltage of 20V. It has a drain-source resistance of 24mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 15.6W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen and lead (Pb) free component

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications


• Load switches

• Notebook PCs

• System power

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