Vishay Type N-Channel MOSFET, 36.2 A, 60 V Depletion, 8-Pin PowerPAK 1212-8 SIS4608LDN-T1-GE3

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

PHP440.80

(exc. VAT)

PHP493.70

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 6,030 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
10 - 40PHP44.08PHP440.80
50 - 90PHP39.672PHP396.72
100 - 240PHP35.704PHP357.04
250 - 990PHP32.134PHP321.34
1000 +PHP28.921PHP289.21

*price indicative

Packaging Options:
RS Stock No.:
252-0289
Mfr. Part No.:
SIS4608LDN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

36.2A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Depletion

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

33.7W

Typical Gate Charge Qg @ Vgs

14.5nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

3.3mm

Standards/Approvals

No

Width

3.3 mm

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen V power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

Related links