Vishay Type N-Channel MOSFET, 44.4 A, 60 V Depletion, 8-Pin PowerPAK 1212-8PT

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Subtotal (1 reel of 3000 units)*

PHP58,848.00

(exc. VAT)

PHP65,910.00

(inc. VAT)

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Per Reel*
3000 - 6000PHP19.616PHP58,848.00
9000 +PHP18.243PHP54,729.00

*price indicative

RS Stock No.:
252-0290
Mfr. Part No.:
SISA18BDN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

44.4A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212-8PT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Depletion

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

14.5nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

33.7W

Maximum Operating Temperature

175°C

Width

3.3 mm

Standards/Approvals

No

Length

3.3mm

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen V power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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