Vishay Single 1 Type N-Channel MOSFET, 60 A, 100 V, 8-Pin PowerPAK SO-8

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Subtotal (1 reel of 3000 units)*

PHP198,186.00

(exc. VAT)

PHP221,967.00

(inc. VAT)

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3000 - 3000PHP66.062PHP198,186.00
6000 - 6000PHP63.68PHP191,040.00
9000 +PHP61.933PHP185,799.00

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RS Stock No.:
180-7355
Mfr. Part No.:
SIR882ADP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0087Ω

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

83W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

19.5nC

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Length

6.25mm

Width

5.26 mm

Height

1.12mm

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 8.7mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 83W and continuous drain current of 60A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free component

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET for fast switching

Applications


• DC/DC primary side switch

• Industrial sites

• Telecom/server 48V, full/half-bridge DC/DC

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

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