Vishay Single 1 Type N-Channel MOSFET, 60 A, 100 V, 8-Pin PowerPAK SO-8 SIR882ADP-T1-GE3

RS Stock No.:: 180-7871
Mfr. Part No.:: SIR882ADP-T1-GE3
Manufacturer:: Vishay

Vishay Single 1 Type N-Channel MOSFET, 60 A, 100 V, 8-Pin PowerPAK SO-8 SIR882ADP-T1-GE3

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Bulk discount available

Subtotal (1 pack of 5 units)*

PHP655.50

(exc. VAT)

PHP734.15

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Last RS stock

Final 8,800 unit(s), ready to ship from another location

Units	Per Unit	Per Pack*
5 - 45	PHP131.10	PHP655.50
50 - 95	PHP117.988	PHP589.94
100 - 495	PHP106.188	PHP530.94
500 - 995	PHP95.572	PHP477.86
1000 +	PHP86.014	PHP430.07

*price indicative

RS Stock No.:: 180-7871
Mfr. Part No.:: SIR882ADP-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PowerPAK SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0087Ω
	Maximum Power Dissipation Pd	83W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.1V
	Typical Gate Charge Qg @ Vgs	19.5nC
	Maximum Operating Temperature	150°C
	Transistor Configuration	Single
	Height	1.12mm
	Length	6.25mm
	Standards/Approvals	No
	Width	5.26 mm
	Number of Elements per Chip	1
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 100V
	Package Type PowerPAK SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0087Ω
	Maximum Power Dissipation Pd 83W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.1V
	Typical Gate Charge Qg @ Vgs 19.5nC
	Maximum Operating Temperature 150°C
	Transistor Configuration Single
	Height 1.12mm
	Length 6.25mm
	Standards/Approvals No
	Width 5.26 mm
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 8.7mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 83W and continuous drain current of 60A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free component

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET for fast switching

Applications

• DC/DC primary side switch

• Industrial sites

• Telecom/server 48V, full/half-bridge DC/DC

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested