Vishay Single 1 Type N-Channel MOSFET, 42 A, 100 V, 8-Pin PowerPAK SO-8L SQJ488EP-T1_GE3
- RS Stock No.:
- 180-8020
- Mfr. Part No.:
- SQJ488EP-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP721.87
(exc. VAT)
PHP808.49
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Supply shortage
- 2,980 left, ready to ship from another location
Our current stock is limited and our suppliers are expecting shortages.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP72.187 | PHP721.87 |
| 100 - 490 | PHP70.022 | PHP700.22 |
| 500 - 990 | PHP65.821 | PHP658.21 |
| 1000 + | PHP59.896 | PHP598.96 |
*price indicative
- RS Stock No.:
- 180-8020
- Mfr. Part No.:
- SQJ488EP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK SO-8L | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.021Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Single | |
| Height | 1.14mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 5.25mm | |
| Width | 6.25 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK SO-8L | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.021Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 83W | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Single | ||
Height 1.14mm | ||
Standards/Approvals AEC-Q101 | ||
Length 5.25mm | ||
Width 6.25 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay SQJ457EP is a automotive N-channel 175°C maximum junction temperature MOSFET having drain to source(Vds) voltage of 100V. The gate to source voltage(VGS) is 20V. It is having Power PAK SO-8L package. It offers drain to source resistance (RDS.) 0.021ohms at 10VGS and 0.0258ohms at 4.5VGS. Maximum drain current 42A.
Trench FET power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Related links
- Vishay Single 1 Type N-Channel MOSFET 100 V, 8-Pin PowerPAK SO-8L
- Vishay Single 1 Type N-Channel MOSFET 100 V, 8-Pin PowerPAK SO-8
- Vishay Single 1 Type N-Channel MOSFET 100 V, 8-Pin PowerPAK SO-8 SIR882ADP-T1-GE3
- Vishay Single SQJ 1 Type P-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8L
- Vishay Single SQJ 1 Type P-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8L SQJ457EP-T1_GE3
- Vishay SQJ Type N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8L SQJ182EP-T1_GE3
- Vishay Type N-Channel MOSFET 30 V Depletion, 4-Pin PowerPAK SO-8L
- Vishay Type N-Channel MOSFET 30 V Enhancement, 4-Pin PowerPAK SO-8L