Vishay Single TrenchFET Type P-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 SI7139DP-T1-GE3

RS Stock No.:: 180-7890
Mfr. Part No.:: SI7139DP-T1-GE3
Manufacturer:: Vishay

Vishay Single TrenchFET Type P-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 SI7139DP-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

PHP625.10

(exc. VAT)

PHP700.10

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Last RS stock

Final 4,800 unit(s), ready to ship from another location

Units	Per Unit	Per Pack*
10 - 40	PHP62.51	PHP625.10
50 - 90	PHP61.26	PHP612.60
100 - 490	PHP60.035	PHP600.35
500 - 990	PHP58.836	PHP588.36
1000 +	PHP57.659	PHP576.59

*price indicative

RS Stock No.:: 180-7890
Mfr. Part No.:: SI7139DP-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PowerPAK SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	00090Ω
	Maximum Power Dissipation Pd	48W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	49.5nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Single
	Length	6.25mm
	Height	1.12mm
	Standards/Approvals	RoHS
	Width	5.26 mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 30V
	Package Type PowerPAK SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 00090Ω
	Maximum Power Dissipation Pd 48W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 49.5nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Transistor Configuration Single
	Length 6.25mm
	Height 1.12mm
	Standards/Approvals RoHS
	Width 5.26 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay MOSFET is a P-channel, PowerPAK-SO-8 package is a new age product with a drain-source voltage of 30V and maximum gate-source voltage of 20V. It has a drain-source resistance of 5.5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 48W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen and Lead (Pb) free component

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switches

• Battery switches

• Load switches

• Notebook computers

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested