Vishay Single TrenchFET Type P-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 SI7139DP-T1-GE3
- RS Stock No.:
- 180-7890
- Mfr. Part No.:
- SI7139DP-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
PHP877.26
(exc. VAT)
PHP982.53
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Last RS stock
- Final 3,700 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP87.726 | PHP877.26 |
| 50 - 90 | PHP85.972 | PHP859.72 |
| 100 - 490 | PHP84.252 | PHP842.52 |
| 500 - 990 | PHP82.569 | PHP825.69 |
| 1000 + | PHP80.917 | PHP809.17 |
*price indicative
- RS Stock No.:
- 180-7890
- Mfr. Part No.:
- SI7139DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 00090Ω | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 48W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 49.5nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Length | 6.25mm | |
| Standards/Approvals | RoHS | |
| Width | 5.26mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 00090Ω | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 48W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 49.5nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Length 6.25mm | ||
Standards/Approvals RoHS | ||
Width 5.26mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is a P-channel, PowerPAK-SO-8 package is a new age product with a drain-source voltage of 30V and maximum gate-source voltage of 20V. It has a drain-source resistance of 5.5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 48W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and Lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Adaptor switches
• Battery switches
• Load switches
• Notebook computers
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
Related links
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- Vishay Single TrenchFET Type P-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8 SIS407ADN-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8
- Vishay TrenchFET Type P-Channel MOSFET 200 V, 8-Pin PowerPAK 1212-8
- Vishay TrenchFET Type P-Channel MOSFET 200 V, 8-Pin PowerPAK 1212-8 SI7119DN-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 SIS413DN-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212