Vishay Dual SIA931DJ Type P-Channel MOSFET, -4.5 A, -30 V Enhancement, 6-Pin PowerPack
- RS Stock No.:
- 180-7340
- Mfr. Part No.:
- SIA931DJ-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP34,770.00
(exc. VAT)
PHP38,940.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from August 14, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP11.59 | PHP34,770.00 |
| 6000 - 6000 | PHP11.161 | PHP33,483.00 |
| 9000 + | PHP10.731 | PHP32,193.00 |
*price indicative
- RS Stock No.:
- 180-7340
- Mfr. Part No.:
- SIA931DJ-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -4.5A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | PowerPack | |
| Series | SIA931DJ | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.1nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.15 mm | |
| Length | 2.15mm | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -4.5A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type PowerPack | ||
Series SIA931DJ | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.1nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Width 2.15 mm | ||
Length 2.15mm | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay SIA931DJ is a dual P-channel MOSFET having drain to source(Vds) voltage of -30V.The gate to source voltage(VGS) is 20V. It is having Power PAK SC-70 package. It offers drain to source resistance (RDS.) 0.065ohms at 10VGS and 0.08ohms at 6VGS. Maximum drain current -4.5A.
Trench FET Gen III power MOSFET
Thermally enhanced Power PAK SC-70 package small footprint area low on resistance
100 % Rg tested
Related links
- Vishay Dual SIA931DJ Type P-Channel MOSFET -30 V Enhancement, 6-Pin PowerPack SIA931DJ-T1-GE3
- Vishay Dual TrenchFET 2 Type N 3.9 A 6-Pin TSOP
- Vishay Dual SI7997DP Type N-Channel MOSFET -30 V Enhancement, 8-Pin PowerPack
- Vishay Dual SI7956DP Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPack
- Vishay Dual SI7997DP Type N-Channel MOSFET -30 V Enhancement, 8-Pin PowerPack SI7997DP-T1-GE3
- Vishay Dual TrenchFET 2 Type N 3.9 A 6-Pin TSOP SI3585CDV-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SC-89
- Vishay Dual SI7956DP Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3