Vishay Dual SIA931DJ Type P-Channel MOSFET, -4.5 A, -30 V Enhancement, 6-Pin PowerPack SIA931DJ-T1-GE3

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Subtotal (1 pack of 20 units)*

PHP308.76

(exc. VAT)

PHP345.82

(inc. VAT)

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Units
Per Unit
Per Pack*
20 - 20PHP15.438PHP308.76
40 - 80PHP14.975PHP299.50
100 - 480PHP14.375PHP287.50
500 - 980PHP13.656PHP273.12
1000 +PHP12.837PHP256.74

*price indicative

Packaging Options:
RS Stock No.:
180-7884
Mfr. Part No.:
SIA931DJ-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-4.5A

Maximum Drain Source Voltage Vds

-30V

Package Type

PowerPack

Series

SIA931DJ

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.1Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.1nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

5W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.2V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Length

2.15mm

Standards/Approvals

No

Width

2.15 mm

Height

0.8mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay SIA931DJ is a dual P-channel MOSFET having drain to source(Vds) voltage of -30V.The gate to source voltage(VGS) is 20V. It is having Power PAK SC-70 package. It offers drain to source resistance (RDS.) 0.065ohms at 10VGS and 0.08ohms at 6VGS. Maximum drain current -4.5A.

Trench FET Gen III power MOSFET

Thermally enhanced Power PAK SC-70 package small footprint area low on resistance

100 % Rg tested

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