Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack

RS Stock No.:: 180-7324
Mfr. Part No.:: SI7956DP-T1-GE3
Manufacturer:: Vishay

Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack

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Bulk discount available

Subtotal (1 reel of 3000 units)*

PHP296,007.00

(exc. VAT)

PHP331,527.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

Plus 3,000 unit(s) shipping from December 26, 2025

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Units	Per Unit	Per Reel*
3000 - 3000	PHP98.669	PHP296,007.00
6000 - 6000	PHP95.536	PHP286,608.00
9000 +	PHP92.404	PHP277,212.00

*price indicative

RS Stock No.:: 180-7324
Mfr. Part No.:: SI7956DP-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	150V
	Series	SI7956DP
	Package Type	PowerPack
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.1Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-50°C
	Typical Gate Charge Qg @ Vgs	17nC
	Maximum Power Dissipation Pd	3.5W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Standards/Approvals	No
	Length	6.25mm
	Height	1.12mm
	Width	5.26 mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 150V
	Series SI7956DP
	Package Type PowerPack
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.1Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -50°C
	Typical Gate Charge Qg @ Vgs 17nC
	Maximum Power Dissipation Pd 3.5W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Standards/Approvals No
	Length 6.25mm
	Height 1.12mm
	Width 5.26 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 150V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 105mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 3.5W and continuous drain current of 4.1A. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Dual MOSFET for space savings

• Halogen free

• Lead (Pb) free component

• Low on-resistance in new low thermal resistance PowerPAK package

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Half bridge and forward converters

• High efficiency primary side switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested