Nexperia PMV20XNE N-Channel MOSFET, 7.2 A, 30 V Enhancement, 3-Pin SOT-23 PMV20XNER
- RS Stock No.:
- 170-5372
- Mfr. Part No.:
- PMV20XNER
- Manufacturer:
- Nexperia
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- RS Stock No.:
- 170-5372
- Mfr. Part No.:
- PMV20XNER
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | PMV20XNE | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 38mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12.4nC | |
| Maximum Power Dissipation Pd | 6.94W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series PMV20XNE | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 38mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12.4nC | ||
Maximum Power Dissipation Pd 6.94W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Robust interfacing between asynchronous and synchronous systems. Flip-flops are Basic storage elements in digital electronics. By only allowing the output to change on an edge transition, flip-flops provide a robust Interface between asynchronous and synchronous systems. With a choice of either positive or negative edge triggered options they provide added design flexibility.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Enhanced power dissipation capability of 1200 mW
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Target applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
Related links
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