Nexperia Type N-Channel MOSFET, 3.1 A, 60 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

PHP36,477.00

(exc. VAT)

PHP40,854.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 - 3000PHP12.159PHP36,477.00
6000 - 12000PHP11.855PHP35,565.00
15000 - 27000PHP11.559PHP34,677.00
30000 +PHP11.27PHP33,810.00

*price indicative

RS Stock No.:
151-3050
Mfr. Part No.:
PMV55ENEAR
Manufacturer:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.1A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12.7nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

8.36W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

3mm

Standards/Approvals

No

Width

1.4 mm

Height

1mm

Automotive Standard

AEC-Q101

Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.

AEC-Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175°C rating

60 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

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