Nexperia Type N-Channel MOSFET, 6.3 A, 20 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

PHP28,185.00

(exc. VAT)

PHP31,566.00

(inc. VAT)

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Temporarily out of stock
  • 3,000 unit(s) shipping from May 20, 2026
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Units
Per Unit
Per Reel*
3000 - 3000PHP9.395PHP28,185.00
6000 - 12000PHP9.105PHP27,315.00
15000 - 27000PHP8.923PHP26,769.00
30000 +PHP8.666PHP25,998.00

*price indicative

RS Stock No.:
153-0718
Mfr. Part No.:
PMV20XNEAR
Manufacturer:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.3A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

34mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

12 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

6.94W

Typical Gate Charge Qg @ Vgs

9.9nC

Maximum Operating Temperature

150°C

Height

1mm

Length

3mm

Width

1.4 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

20 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Low threshold voltage

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

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