Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23

This image is representative of the product range

View all MOSFETs
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
165-6982
Mfr. Part No.:
SQ2310ES-T1_BE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

TrenchFET Power MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

SQ Rugged

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.03Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±8 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

8.5nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 61249-2-21, RoHS: 2002/95/EC

Width

1.4 mm

Length

3.04mm

Height

1.02mm

Automotive Standard

AEC-Q101

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor


The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs


• AEC-Q101 qualified

• Junction temperature up to +175°C

• Low on-resistance n- and p-channel TrenchFET® technologies

• Innovative space-saving package options

MOSFET Transistors, Vishay Semiconductor


Approvals

AEC-Q101

Related links