Vishay 2N7002K Type N-Channel TrenchFET Power MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002K-T1-GE3
- RS Stock No.:
- 787-9058
- Mfr. Part No.:
- 2N7002K-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 100 units)*
PHP608.00
(exc. VAT)
PHP681.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- 100 left, ready to ship from another location
- Final 145,000 unit(s) shipping from January 23, 2026
Units | Per Unit | Per Pack* |
|---|---|---|
| 100 - 100 | PHP6.08 | PHP608.00 |
| 200 - 400 | PHP5.898 | PHP589.80 |
| 500 - 900 | PHP5.662 | PHP566.20 |
| 1000 - 1900 | PHP5.379 | PHP537.90 |
| 2000 + | PHP5.056 | PHP505.60 |
*price indicative
- RS Stock No.:
- 787-9058
- Mfr. Part No.:
- 2N7002K-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | TrenchFET Power MOSFET | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7002K | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 0.35W | |
| Typical Gate Charge Qg @ Vgs | 0.4nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Standards/Approvals | IEC 61249-2-21, JEDEC JS709A, RoHS | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type TrenchFET Power MOSFET | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7002K | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 0.35W | ||
Typical Gate Charge Qg @ Vgs 0.4nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Standards/Approvals IEC 61249-2-21, JEDEC JS709A, RoHS | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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