Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23 SQ2309ES-T1_GE3

RS Stock No.:: 180-7990
Mfr. Part No.:: SQ2309ES-T1_GE3
Manufacturer:: Vishay

Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23 SQ2309ES-T1_GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 20 units)*

PHP646.80

(exc. VAT)

PHP724.40

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Last RS stock

Final 380 unit(s), ready to ship from another location

Units	Per Unit	Per Pack*
20 - 80	PHP32.34	PHP646.80
100 - 480	PHP29.106	PHP582.12
500 - 980	PHP26.196	PHP523.92
1000 +	PHP23.576	PHP471.52

*price indicative

RS Stock No.:: 180-7990
Mfr. Part No.:: SQ2309ES-T1_GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type P
	Product Type	TrenchFET Power MOSFET
	Maximum Continuous Drain Current Id	1.7A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-236
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.335Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	8.5nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Length	3.04mm
	Height	1.12mm
	Width	2.64 mm
	Standards/Approvals	AEC-Q101, IEC 61249-2-21, RoHS (2002/95/EC)
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Channel Type Type P
	Product Type TrenchFET Power MOSFET
	Maximum Continuous Drain Current Id 1.7A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-236
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.335Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 8.5nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Length 3.04mm
	Height 1.12mm
	Width 2.64 mm
	Standards/Approvals AEC-Q101, IEC 61249-2-21, RoHS (2002/95/EC)
	Automotive Standard AEC-Q101

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 15.5mohm at a gate-source voltage of 10V. It has continuous drain current of 50A and maximum power dissipation of 136W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• Package with low thermal resistance

• TrenchFET power MOSFET

Applications

• Adaptor switch

• Load switches

Certifications

• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested