N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay SIS892ADN-T1-GE3

RS Stock No.:: 165-6981
Mfr. Part No.:: SIS892ADN-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay SIS892ADN-T1-GE3

This image is representative of the product range

Price Each (On a Reel of 3000)**

PHP29.391

(exc. VAT)

PHP32.918

(inc. VAT)

Stock check temporarily unavailable - call for stock availability

FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit	Per Reel**
3000 +	PHP29.391	PHP88,173.00

**price indicative

RS Stock No.:: 165-6981
Mfr. Part No.:: SIS892ADN-T1-GE3
Manufacturer:: Vishay

SiS892ADN, N-Channel 100V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	28 A
Maximum Drain Source Voltage	100 V
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	47 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	52 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	3.4mm
Transistor Material	Si
Length	3.4mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	12.8 nC @ 10 V
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	1.12mm

N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay SIS892ADN-T1-GE3

FREE delivery for over PHP7,000.00 (ex VAT)

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

Related links