Vishay SiS892ADN Type N-Channel Power MOSFET, 28 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS892ADN-T1-GE3
- RS Stock No.:
- 787-9399
- Mfr. Part No.:
- SIS892ADN-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP456.00
(exc. VAT)
PHP510.70
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 2,720 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP45.60 | PHP456.00 |
| 20 - 40 | PHP44.234 | PHP442.34 |
| 50 - 90 | PHP42.907 | PHP429.07 |
| 100 - 190 | PHP41.621 | PHP416.21 |
| 200 + | PHP40.374 | PHP403.74 |
*price indicative
- RS Stock No.:
- 787-9399
- Mfr. Part No.:
- SIS892ADN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK 1212-8 | |
| Series | SiS892ADN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 52W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 6.1nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Standards/Approvals | RoHS | |
| Height | 1.12mm | |
| Width | 3.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK 1212-8 | ||
Series SiS892ADN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 52W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 6.1nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Standards/Approvals RoHS | ||
Height 1.12mm | ||
Width 3.4 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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