Nexperia Type N-Channel MOSFET, 4.7 A, 20 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

PHP24,948.00

(exc. VAT)

PHP27,942.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 - 3000PHP8.316PHP24,948.00
6000 - 12000PHP8.108PHP24,324.00
15000 - 27000PHP7.905PHP23,715.00
30000 +PHP7.707PHP23,121.00

*price indicative

RS Stock No.:
151-3058
Mfr. Part No.:
PMV28UNEAR
Manufacturer:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3.9W

Maximum Gate Source Voltage Vgs

8 V

Typical Gate Charge Qg @ Vgs

6.2nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

1.4 mm

Standards/Approvals

No

Height

1mm

Length

3mm

Automotive Standard

AEC-Q101

Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.

AEC-Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175°C rating

20 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Low threshold voltage

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

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