Nexperia BSH205G2 Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 BSH205G2R
- RS Stock No.:
- 136-4849
- Mfr. Part No.:
- BSH205G2R
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 100 units)*
PHP725.20
(exc. VAT)
PHP812.20
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 3,000 unit(s) shipping from March 25, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 100 - 400 | PHP7.252 | PHP725.20 |
| 500 - 900 | PHP6.348 | PHP634.80 |
| 1000 - 1900 | PHP5.638 | PHP563.80 |
| 2000 + | PHP5.073 | PHP507.30 |
*price indicative
- RS Stock No.:
- 136-4849
- Mfr. Part No.:
- BSH205G2R
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | BSH205G2 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 6.25W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series BSH205G2 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 6.25W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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