STMicroelectronics STripFET V Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 STR2N2VH5
- RS Stock No.:
- 791-7876
- Mfr. Part No.:
- STR2N2VH5
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
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Subtotal (1 pack of 10 units)*
PHP236.41
(exc. VAT)
PHP264.78
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 3,300 unit(s) shipping from March 23, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP23.641 | PHP236.41 |
| 20 - 90 | PHP23.428 | PHP234.28 |
| 100 - 190 | PHP18.334 | PHP183.34 |
| 200 - 390 | PHP16.193 | PHP161.93 |
| 400 + | PHP12.783 | PHP127.83 |
*price indicative
- RS Stock No.:
- 791-7876
- Mfr. Part No.:
- STR2N2VH5
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | STripFET V | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 350mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.3mm | |
| Width | 1.75 mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series STripFET V | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 350mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.3mm | ||
Width 1.75 mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Automotive Standard No | ||
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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