N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC Infineon IRF6648TRPBF
- RS Stock No.:
- 130-0948
- Mfr. Part No.:
- IRF6648TRPBF
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)**
PHP224.22
(exc. VAT)
PHP251.12
(inc. VAT)
4762 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Pack** |
---|---|---|
2 - 8 | PHP112.11 | PHP224.22 |
10 - 98 | PHP108.74 | PHP217.48 |
100 - 498 | PHP105.48 | PHP210.96 |
500 - 998 | PHP102.315 | PHP204.63 |
1000 + | PHP99.245 | PHP198.49 |
**price indicative
- RS Stock No.:
- 130-0948
- Mfr. Part No.:
- IRF6648TRPBF
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 86 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | DirectFET ISOMETRIC | |
Series | DirectFET, HEXFET | |
Mounting Type | Surface Mount | |
Maximum Drain Source Resistance | 7 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.9V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 89 W | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Length | 6.35mm | |
Typical Gate Charge @ Vgs | 36 nC @ 10 V | |
Width | 5.05mm | |
Number of Elements per Chip | 1 | |
Height | 0.5mm | |
Minimum Operating Temperature | -40 °C | |
Forward Diode Voltage | 1.3V | |
Select all | ||
---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 86 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DirectFET ISOMETRIC | ||
Series DirectFET, HEXFET | ||
Mounting Type Surface Mount | ||
Maximum Drain Source Resistance 7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.9V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 89 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 6.35mm | ||
Typical Gate Charge @ Vgs 36 nC @ 10 V | ||
Width 5.05mm | ||
Number of Elements per Chip 1 | ||
Height 0.5mm | ||
Minimum Operating Temperature -40 °C | ||
Forward Diode Voltage 1.3V | ||
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