N-Channel MOSFET, 100 A, 500 V, 3-Pin TO-264 onsemi FDL100N50F
- RS Stock No.:
- 124-1331
- Mfr. Part No.:
- FDL100N50F
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 tube of 25 units)**
PHP21,253.88
(exc. VAT)
PHP23,804.35
(inc. VAT)
525 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Tube** |
|---|---|---|
| 25 - 25 | PHP850.155 | PHP21,253.875 |
| 50 - 100 | PHP824.65 | PHP20,616.25 |
| 125 - 225 | PHP799.911 | PHP19,997.775 |
| 250 + | PHP775.913 | PHP19,397.825 |
**price indicative
- RS Stock No.:
- 124-1331
- Mfr. Part No.:
- FDL100N50F
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | TO-264 | |
| Series | UniFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 55 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 2.5 kW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 238 nC @ 10 V | |
| Length | 20mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Width | 5mm | |
| Number of Elements per Chip | 1 | |
| Height | 20mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type TO-264 | ||
Series UniFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 55 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 2.5 kW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 238 nC @ 10 V | ||
Length 20mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 5mm | ||
Number of Elements per Chip 1 | ||
Height 20mm | ||
Minimum Operating Temperature -55 °C | ||
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