onsemi UniFET Type N-Channel MOSFET, 15 A, 500 V Enhancement, 3-Pin TO-263 FDB15N50

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1 - 9PHP183.48
10 - 49PHP177.97
50 - 99PHP172.65
100 - 249PHP167.46
250 +PHP162.44

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Packaging Options:
RS Stock No.:
759-8958
Mfr. Part No.:
FDB15N50
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

500V

Package Type

TO-263

Series

UniFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

380mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

33nC

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Height

4.83mm

Width

11.33 mm

Standards/Approvals

No

Length

10.67mm

Automotive Standard

No

COO (Country of Origin):
CN

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.

UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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