Infineon CoolMOS P6 Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247 IPW60R190P6FKSA1
- RS Stock No.:
- 110-9099
- Mfr. Part No.:
- IPW60R190P6FKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 5 units)*
PHP897.68
(exc. VAT)
PHP1,005.40
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 60 unit(s) shipping from December 26, 2025
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP179.536 | PHP897.68 |
| 50 - 245 | PHP170.562 | PHP852.81 |
| 250 - 495 | PHP162.062 | PHP810.31 |
| 500 - 1245 | PHP149.738 | PHP748.69 |
| 1250 + | PHP135.016 | PHP675.08 |
*price indicative
- RS Stock No.:
- 110-9099
- Mfr. Part No.:
- IPW60R190P6FKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS P6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 151W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.21 mm | |
| Standards/Approvals | No | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS P6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 151W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 5.21 mm | ||
Standards/Approvals No | ||
Height 21.1mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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- Infineon CoolMOS P6 Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-220 IPA60R125P6XKSA1
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 IPB60R160P6ATMA1
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-220