Infineon OptiMOS-T2 Type N-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50N04S408ATMA1
- RS Stock No.:
- 110-7766
- Mfr. Part No.:
- IPD50N04S408ATMA1
- Manufacturer:
- Infineon
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Subtotal (1 tape of 25 units)*
PHP989.80
(exc. VAT)
PHP1,108.575
(inc. VAT)
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In Stock
- 4,250 unit(s) ready to ship from another location
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Units | Per Unit | Per Tape* |
|---|---|---|
| 25 - 100 | PHP39.592 | PHP989.80 |
| 125 - 600 | PHP38.404 | PHP960.10 |
| 625 - 1225 | PHP37.252 | PHP931.30 |
| 1250 - 3100 | PHP36.135 | PHP903.38 |
| 3125 + | PHP35.051 | PHP876.28 |
*price indicative
- RS Stock No.:
- 110-7766
- Mfr. Part No.:
- IPD50N04S408ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS-T2 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17.2nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 46W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS-T2 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17.2nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 46W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Not Applicable
Infineon OptiMOS™ T2 Power MOSFETs
Infineons new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C Peak reflow
175°C operating temperature
Green Product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L12ATMA2
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD90N04S403ATMA1
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD90N04S405ATMA1
