Infineon OptiMOS 5 Type N-Channel Power Transistor, 120 A, 100 V Enhancement, 3-Pin TO-220 IPP023N10N5AKSA1
- RS Stock No.:
- 110-7116
- Mfr. Part No.:
- IPP023N10N5AKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 4 units)*
PHP1,201.032
(exc. VAT)
PHP1,345.156
(inc. VAT)
Stock information currently inaccessible
Units | Per Unit | Per Pack* |
|---|---|---|
| 4 - 4 | PHP300.258 | PHP1,201.03 |
| 8 - 36 | PHP291.25 | PHP1,165.00 |
| 40 - 76 | PHP282.51 | PHP1,130.04 |
| 80 - 196 | PHP274.035 | PHP1,096.14 |
| 200 + | PHP265.81 | PHP1,063.24 |
*price indicative
- RS Stock No.:
- 110-7116
- Mfr. Part No.:
- IPP023N10N5AKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | OptiMOS 5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 168nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Width | 4.57 mm | |
| Height | 15.95mm | |
| Standards/Approvals | RoHS, Pb-Free, JEDEC (J-STD20 and JESD22) | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series OptiMOS 5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 168nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Width 4.57 mm | ||
Height 15.95mm | ||
Standards/Approvals RoHS, Pb-Free, JEDEC (J-STD20 and JESD22) | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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