Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA1

RS Stock No.:: 826-9092
Mfr. Part No.:: IPB120P04P4L03ATMA1
Manufacturer:: Infineon

Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA1

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

PHP1,010.80

(exc. VAT)

PHP1,132.10

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Last RS stock

Final 3,790 unit(s), ready to ship from another location

Units	Per Unit	Per Pack*
10 - 10	PHP101.08	PHP1,010.80
20 - 40	PHP98.048	PHP980.48
50 - 90	PHP95.107	PHP951.07
100 - 190	PHP92.254	PHP922.54
200 +	PHP89.486	PHP894.86

*price indicative

RS Stock No.:: 826-9092
Mfr. Part No.:: IPB120P04P4L03ATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-263
	Series	OptiMOS P
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	5.2mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	180nC
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	136W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Length	10mm
	Width	9.25 mm
	Height	4.4mm
	Automotive Standard	AEC-Q

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-263
	Series OptiMOS P
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 5.2mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 180nC
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 136W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Length 10mm
	Width 9.25 mm
	Height 4.4mm
	Automotive Standard AEC-Q

RoHS Status: Not Applicable

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA1

FREE delivery for orders over ₱3,000.00

Infineon OptiMOS™P P-Channel Power MOSFETs

MOSFET Transistors, Infineon

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