Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA1

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PHP1,041.20

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PHP1,166.10

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10 - 10PHP104.12PHP1,041.20
20 - 40PHP100.997PHP1,009.97
50 - 90PHP97.968PHP979.68
100 - 190PHP95.029PHP950.29
200 +PHP92.178PHP921.78

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Packaging Options:
RS Stock No.:
826-9092
Mfr. Part No.:
IPB120P04P4L03ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Power Transistor

Channel Type

Type P

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS P

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

180nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

136W

Maximum Operating Temperature

175°C

Length

10mm

Height

4.4mm

Standards/Approvals

RoHS

Width

9.25 mm

Automotive Standard

AEC-Q

RoHS Status: Not Applicable

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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