Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263

RS Stock No.:: 124-8751
Mfr. Part No.:: IPB120P04P4L03ATMA1
Manufacturer:: Infineon

Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 1000 units)*

PHP115,520.00

(exc. VAT)

PHP129,380.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Temporarily out of stock

3,000 unit(s) shipping from January 02, 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Reel*
1000 - 1000	PHP115.52	PHP115,520.00
2000 +	PHP114.483	PHP114,483.00

*price indicative

RS Stock No.:: 124-8751
Mfr. Part No.:: IPB120P04P4L03ATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	Power Transistor
	Channel Type	Type P
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-263
	Series	OptiMOS P
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	5.2mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	136W
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	180nC
	Maximum Operating Temperature	175°C
	Length	10mm
	Standards/Approvals	RoHS
	Width	9.25 mm
	Height	4.4mm
	Automotive Standard	AEC-Q

	Select all
	Brand Infineon
	Product Type Power Transistor
	Channel Type Type P
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-263
	Series OptiMOS P
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 5.2mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 136W
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 180nC
	Maximum Operating Temperature 175°C
	Length 10mm
	Standards/Approvals RoHS
	Width 9.25 mm
	Height 4.4mm
	Automotive Standard AEC-Q

RoHS Status: Not Applicable

COO (Country of Origin):: CN

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263

FREE delivery for orders over ₱3,000.00

Infineon OptiMOS™P P-Channel Power MOSFETs

MOSFET Transistors, Infineon

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