Microchip MSCSMC N-Channel MOSFET Modules, 236 A, 1.2 kV Enhancement Mode, 33-Pin Module MSCSMC120AM04TBZ2EG
- RS Stock No.:
- 931-017
- Mfr. Part No.:
- MSCSMC120AM04TBZ2EG
- Manufacturer:
- Microchip
N
Subtotal (1 unit)*
PHP10,399.02
(exc. VAT)
PHP11,646.90
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Temporarily out of stock
- Shipping from May 25, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 + | PHP10,399.02 |
*price indicative
- RS Stock No.:
- 931-017
- Mfr. Part No.:
- MSCSMC120AM04TBZ2EG
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Product Type | MOSFET Modules | |
| Maximum Continuous Drain Current Id | 236A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | MSCSMC | |
| Package Type | Module | |
| Mount Type | Direct | |
| Pin Count | 33 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 21V | |
| Forward Voltage Vf | 4.7V | |
| Maximum Power Dissipation Pd | 604W | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 726nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 56.7mm | |
| Height | 16.4mm | |
| Standards/Approvals | No | |
| Width | 62.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Product Type MOSFET Modules | ||
Maximum Continuous Drain Current Id 236A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series MSCSMC | ||
Package Type Module | ||
Mount Type Direct | ||
Pin Count 33 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 21V | ||
Forward Voltage Vf 4.7V | ||
Maximum Power Dissipation Pd 604W | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 726nC | ||
Maximum Operating Temperature 175°C | ||
Length 56.7mm | ||
Height 16.4mm | ||
Standards/Approvals No | ||
Width 62.8mm | ||
Automotive Standard No | ||
The Microchip Advanced silicon carbide power module delivers exceptional performance in high-efficiency applications, particularly in demanding environments requiring robust power management and thermal capabilities.
SiC technology ensures low switching and conduction losses
Integrated thermistor facilitates effective temperature monitoring
Low thermal resistance allows efficient heat dissipation
Ultra low weight and profile contribute to design flexibility
Related links
- STMicroelectronics SCT N-Channel MOSFET Modules 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG
- DiodesZetex N Channel Enhancement Mode Mosfet DMW N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- Microchip Half Bridge Phase Leg SiC MOSFET N channel-Channel MOSFET Modules 1200 V Enhancement
- Infineon Half Bridge XHP 2 N-Channel MOSFET Modules 2300 V Enhancement, 15-Pin XHP-2 FF1000UXTR23T2M1BPSA1
- onsemi NCP402045 N-Channel MOSFET 20 V Enhancement, 33-Pin PQFN-31 (5 x 5 mm) NCP402045MNTWG
- Microchip Half Bridge mSiC N-Channel SiC Power Module 3300 V Enhancement Mode MSCSM330DUM07CD3NG
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOS-T2 2 N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon Enhancement Mode OptiMOS-T2 2 N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON