Name: STMicroelectronics SCT SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG
Brand: STMicroelectronics
SKU: 202-5482
Price: 1221.33 PHP
Availability: Discontinued

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Technical data sheets

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Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	STMicroelectronics
	Channel Type	N
	Maximum Continuous Drain Current	33 A
	Maximum Drain Source Voltage	1200 V
	Package Type	H2PAK-7
	Series	SCT
	Mounting Type	Surface Mount
	Pin Count	7
	Maximum Drain Source Resistance	0.105 Ω
	Channel Mode	Depletion
	Maximum Gate Threshold Voltage	5V
	Number of Elements per Chip	1
	Transistor Material	SiC

	Select all
	Brand STMicroelectronics
	Channel Type N
	Maximum Continuous Drain Current 33 A
	Maximum Drain Source Voltage 1200 V
	Package Type H2PAK-7
	Series SCT
	Mounting Type Surface Mount
	Pin Count 7
	Maximum Drain Source Resistance 0.105 Ω
	Channel Mode Depletion
	Maximum Gate Threshold Voltage 5V
	Number of Elements per Chip 1
	Transistor Material SiC

Datasheet - SCTH40N120G2V7AG

The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

Very fast and robust intrinsic body diode
Low capacitance

STMicroelectronics SCT SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG

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