ROHM HT8MD5HT Dual N-Channel Single MOSFETs, 80 V Enhancement, 8-Pin HSMT-8 HT8MD5HTB1

RS Stock No.:: 687-385
Mfr. Part No.:: HT8MD5HTB1
Manufacturer:: ROHM

ROHM HT8MD5HT Dual N-Channel Single MOSFETs, 80 V Enhancement, 8-Pin HSMT-8 HT8MD5HTB1

This image is representative of the product range

Bulk discount available

Subtotal (1 tape of 2 units)*

PHP89.60

(exc. VAT)

PHP100.36

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

200 unit(s) ready to ship from another location

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Units	Per Unit	Per Tape*
2 - 18	PHP44.80	PHP89.60
20 - 48	PHP39.58	PHP79.16
50 - 198	PHP35.665	PHP71.33
200 - 998	PHP28.705	PHP57.41
1000 +	PHP27.835	PHP55.67

*price indicative

RS Stock No.:: 687-385
Mfr. Part No.:: HT8MD5HTB1
Manufacturer:: ROHM

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Channel Type	Dual N
	Product Type	Single MOSFETs
	Maximum Drain Source Voltage Vds	80V
	Series	HT8MD5HT
	Package Type	HSMT-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	165mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	3.1nC
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	13.0W
	Maximum Operating Temperature	150°C
	Height	0.8mm
	Length	3.45mm
	Width	3.4 mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand ROHM
	Channel Type Dual N
	Product Type Single MOSFETs
	Maximum Drain Source Voltage Vds 80V
	Series HT8MD5HT
	Package Type HSMT-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 165mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 3.1nC
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 13.0W
	Maximum Operating Temperature 150°C
	Height 0.8mm
	Length 3.45mm
	Width 3.4 mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - HT8MD5HTB1

The ROHM Power MOSFET designed for versatile electronic applications. With its dual N channel and P channel configuration, this component delivers exceptional performance, allowing for effective power management in motor drives and other demanding circuits. Features such as low on-resistance ensure minimal power loss during operation, while the HSMT8 packaging allows for a compact footprint without compromising performance. HT8MD5H supports a wide voltage range and is compliant with RoHS and halogen-free standards, making it an ideal choice for environmentally-conscious designs. Built with reliability in mind, this MOSFET is suitable for various applications requiring robust performance under varying conditions.

Low on resistance designs enhance efficiency in power applications

High power capabilities in a compact HSMT8 package streamline integration

RoHS compliant and halogen-free construction supports eco-friendly designs

100% Rg and UIS tested for reliability under demanding operational conditions

Optimised for motor drive applications, ensuring effective power control

Wide voltage range ensures versatility in various electronic environments

Designed to withstand maximum junction temperatures of up to 150°C

ROHM HT8MD5HT Dual N-Channel Single MOSFETs, 80 V Enhancement, 8-Pin HSMT-8 HT8MD5HTB1

FREE delivery for orders over ₱3,000.00

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