ROHM HT8KF6H Dual N-Channel Single MOSFETs, 150 V Enhancement, 8-Pin HSMT-8 HT8KF6HTB1
- RS Stock No.:
- 687-371
- Mfr. Part No.:
- HT8KF6HTB1
- Manufacturer:
- ROHM
N
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Subtotal (1 tape of 2 units)*
PHP110.48
(exc. VAT)
PHP123.74
(inc. VAT)
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- Shipping from January 19, 2026
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Units | Per Unit | Per Tape* |
|---|---|---|
| 2 - 18 | PHP55.24 | PHP110.48 |
| 20 - 48 | PHP48.715 | PHP97.43 |
| 50 - 198 | PHP43.93 | PHP87.86 |
| 200 - 998 | PHP35.23 | PHP70.46 |
| 1000 + | PHP34.36 | PHP68.72 |
*price indicative
- RS Stock No.:
- 687-371
- Mfr. Part No.:
- HT8KF6HTB1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Dual N | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HT8KF6H | |
| Package Type | HSMT-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 214mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 14W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.45mm | |
| Height | 0.8mm | |
| Width | 3.4 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Dual N | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HT8KF6H | ||
Package Type HSMT-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 214mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 14W | ||
Maximum Operating Temperature 150°C | ||
Length 3.45mm | ||
Height 0.8mm | ||
Width 3.4 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
The ROHM N channel power MOSFET designed for efficient power management in various applications. This component provides robust electrical characteristics, including a maximum continuous drain current of ±7.0A, ensuring reliable operation under high loads. Its Pb-free and halogen-free materials meet RoHS standards, contributing to environmentally friendly designs. This MOSFET's thermal resistance is optimised, allowing for effective heat dissipation, thus improving device longevity and performance in various electronic applications.
Low on resistance for improved efficiency
High power capacity in a compact HSMT8 mould package
Complies with RoHS regulations with Pb free plating
Halogen-free design to support eco-friendly initiatives
Versatile application in motor drives and power management systems
High maximum junction temperature rating of 150°C
Impressive maximum power dissipation of 14W
Reliable avalanche characteristics with a maximum energy of 0.24mJ
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