ROHM HT8KE6 2 Type N-Channel MOSFET Arrays, 12.5 A, 100 V Enhancement, 8-Pin HSMT-8 HT8KE6HTB1
- RS Stock No.:
- 646-615
- Mfr. Part No.:
- HT8KE6HTB1
- Manufacturer:
- ROHM
N
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 10 units)*
PHP549.79
(exc. VAT)
PHP615.76
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from February 02, 2026
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Units | Per Unit | Per Tape* |
|---|---|---|
| 10 - 90 | PHP54.979 | PHP549.79 |
| 100 - 490 | PHP48.367 | PHP483.67 |
| 500 - 990 | PHP43.409 | PHP434.09 |
| 1000 + | PHP34.362 | PHP343.62 |
*price indicative
- RS Stock No.:
- 646-615
- Mfr. Part No.:
- HT8KE6HTB1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET Arrays | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HT8KE6 | |
| Package Type | HSMT-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 14W | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, Halogen Free, Pb Free | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET Arrays | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HT8KE6 | ||
Package Type HSMT-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 14W | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, Halogen Free, Pb Free | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM Power MOSFET with low on resistance and High power small mould package suitable for Switching and Motor drives applications.
Pb free plating
RoHS compliant
Halogen Free
100% Rg and UIS tested
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