ROHM RY7P250BM Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin DFN8080T8LSHAAI RY7P250BMTBC
- RS Stock No.:
- 687-343
- Mfr. Part No.:
- RY7P250BMTBC
- Manufacturer:
- ROHM
N
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Subtotal (1 tape of 2 units)*
PHP826.42
(exc. VAT)
PHP925.60
(inc. VAT)
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- Shipping from January 19, 2026
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Units | Per Unit | Per Tape* |
|---|---|---|
| 2 - 18 | PHP413.21 | PHP826.42 |
| 20 - 98 | PHP363.625 | PHP727.25 |
| 100 - 198 | PHP326.655 | PHP653.31 |
| 200 + | PHP256.625 | PHP513.25 |
*price indicative
- RS Stock No.:
- 687-343
- Mfr. Part No.:
- RY7P250BMTBC
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | DFN8080T8LSHAAI | |
| Series | RY7P250BM | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.86mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 240nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 340W | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.7mm | |
| Width | 1.70 mm | |
| Standards/Approvals | RoHS | |
| Height | 0.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type DFN8080T8LSHAAI | ||
Series RY7P250BM | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.86mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 240nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 340W | ||
Maximum Operating Temperature 150°C | ||
Length 1.7mm | ||
Width 1.70 mm | ||
Standards/Approvals RoHS | ||
Height 0.8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
The ROHM Power MOSFET designed for demanding applications requiring excellent efficiency and reliability. This MOSFET is ideal for use in Hot Swap Controllers and other power switching applications, where its low on-resistance of 1.86mΩ ensures minimal energy loss during operation. This component is RoHS and halogen-free, making it a safe choice for environmentally conscious designs. With advanced features like 100% Rg and UIS testing, it guarantees robust performance under varying conditions, making it suitable for high-performance and high-reliability electronic circuits.
Low on resistance for enhanced efficiency
Wide-SOA characteristics for superior reliability
Designed to handle continuous drain currents up to 250A
High pulsed drain current capability at ±900A
Excellent thermal management with thermal resistance of 0.44°C/W
Suitable for a wide operating temperature range of -55 to +175°C
Complies with RoHS and halogen-free standards.
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