ROHM RF9P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 6-Pin DFN2020Y7LSAA RF9P120BKFRATCR

RS Stock No.:: 687-387
Mfr. Part No.:: RF9P120BKFRATCR
Manufacturer:: ROHM

ROHM RF9P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 6-Pin DFN2020Y7LSAA RF9P120BKFRATCR

This image is representative of the product range

Bulk discount available

Subtotal (1 tape of 2 units)*

PHP87.86

(exc. VAT)

PHP98.40

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Temporarily out of stock

Shipping from January 19, 2026

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Units	Per Unit	Per Tape*
2 - 18	PHP43.93	PHP87.86
20 - 48	PHP38.71	PHP77.42
50 - 198	PHP34.795	PHP69.59
200 - 998	PHP27.835	PHP55.67
1000 +	PHP27.40	PHP54.80

*price indicative

RS Stock No.:: 687-387
Mfr. Part No.:: RF9P120BKFRATCR
Manufacturer:: ROHM

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Drain Source Voltage Vds	100V
	Package Type	DFN2020Y7LSAA
	Series	RF9P120BKFRA
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	58mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	23W
	Typical Gate Charge Qg @ Vgs	6.9nC
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	2.1mm
	Height	0.65mm
	Width	2.1 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand ROHM
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Drain Source Voltage Vds 100V
	Package Type DFN2020Y7LSAA
	Series RF9P120BKFRA
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 58mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 23W
	Typical Gate Charge Qg @ Vgs 6.9nC
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 2.1mm
	Height 0.65mm
	Width 2.1 mm
	Automotive Standard AEC-Q101

Datasheet - RF9P120BKFRATCR

COO (Country of Origin):: JP

The ROHM N channel power MOSFET designed for efficient switching in various applications including automotive, lighting, and body electronics. Engineered to support a robust continuous drain current of ±12A and a maximum Drain-Source voltage of 100V, this component excels in environments demanding reliability and efficiency. Its advanced design features low on-resistance and high power density, ensuring optimal performance while complying with AEC-Q101 standards and RoHS regulations. The compact DFN2020Y7LSAA package further allows easy integration into space-constrained designs, making it a versatile choice for modern electronic solutions.

AEC Q101 qualified for automotive applications, ensuring reliability

Low on resistance (RDS(on)), enhancing efficiency during operation

Supports a Drain-Source voltage of 100V suitable for high-voltage applications

Continuous drain current of ±12A, capable of handling demanding loads

Disposes of Pb free plating, ensuring compliance with environmental standards

Halogen free, contributing to eco-friendly product design

High power density with a maximum power dissipation of 23W, optimising thermal performance

ROHM RF9P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 6-Pin DFN2020Y7LSAA RF9P120BKFRATCR

FREE delivery for orders over ₱3,000.00

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