Vishay SI3122DV Type N-Channel Single MOSFETs, 1.95 A, 100 V Enhancement, 6-Pin PowerPAK SI3122DV-T1-GE3

N

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Subtotal (1 reel of 3000 units)*

PHP39,876.00

(exc. VAT)

PHP44,661.00

(inc. VAT)

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RS Stock No.:
653-088
Mfr. Part No.:
SI3122DV-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

1.95A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK

Series

SI3122DV

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.160Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

2.9nC

Maximum Power Dissipation Pd

1.34W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

2.98 mm

Length

3.1mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in a TSOP-6 format, it utilizes TrenchFET Gen IV technology to deliver low RDS(on), fast switching, and efficient thermal performance in space-constrained designs.

Pb Free

Halogen free

RoHS compliant

Used in LED backlighting

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