Vishay SIB4122DK Type N-Channel Single MOSFETs, 5.9 A, 100 V Enhancement, 7-Pin PowerPAK
- RS Stock No.:
- 653-094
- Mfr. Part No.:
- SIB4122DK-T1-GE3
- Manufacturer:
- Vishay
N
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 1 unit)*
PHP21.75
(exc. VAT)
PHP24.36
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 24 | PHP21.75 |
| 25 - 99 | PHP19.14 |
| 100 - 499 | PHP17.40 |
| 500 - 999 | PHP14.79 |
| 1000 + | PHP13.92 |
*price indicative
- RS Stock No.:
- 653-094
- Mfr. Part No.:
- SIB4122DK-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SIB4122DK | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.160Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 12.5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Width | 1.6 mm | |
| Length | 1.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SIB4122DK | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.160Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 12.5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Width 1.6 mm | ||
Length 1.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in PowerPAK SC-75, it utilizes ThunderFET Gen IV technology to deliver low RDS(on), fast switching, and excellent thermal performance in space-constrained designs.
Pb Free
Halogen free
RoHS compliant
Used in LED backlighting
Related links
- Vishay SIB4122DK Type N-Channel Single MOSFETs 100 V Enhancement, 7-Pin PowerPAK SIB4122DK-T1-GE3
- Vishay SIS4406DN Type N-Channel Single MOSFETs 40 V Enhancement, 8-Pin PowerPAK
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK
- Vishay SIR4411DP Type P-Channel Single MOSFETs -40 V Enhancement, 8-Pin PowerPAK
- Vishay SIS5712DN Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK
- Vishay SIHM080N60E Type N-Channel Single MOSFETs 600 V Enhancement, 4-Pin PowerPAK
- Vishay SIR5712DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK
- Vishay SISS5208DN Type N-Channel Single MOSFETs 20 V Enhancement, 8-Pin PowerPAK
