Vishay SIS4406DN Type N-Channel Single MOSFETs, 62.8 A, 40 V Enhancement, 8-Pin PowerPAK SIS4406DN-T1-GE3

N

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Subtotal (1 reel of 3000 units)*

PHP82,497.00

(exc. VAT)

PHP92,397.00

(inc. VAT)

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3000 +PHP27.499PHP82,497.00

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RS Stock No.:
653-146
Mfr. Part No.:
SIS4406DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

62.8A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAK

Series

SIS4406DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00475Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

33.7W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

23.7nC

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.30mm

Height

0.41mm

Width

3.30 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 40 V drain-source voltage. Packaged in PowerPAK 1212-8, it utilizes TrenchFET Gen IV technology to deliver low gate charge (Qg), reduced output charge (Qoss), and optimized switching performance.

Pb Free

Halogen free

RoHS compliant

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