Vishay SIR4156LDP Type N-Channel Single MOSFETs, 25.7 A, 100 V Enhancement, 8-Pin PowerPAK

N

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PHP42.63

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PHP47.75

(inc. VAT)

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25 - 99PHP41.76
100 - 499PHP40.89
500 - 999PHP34.80
1000 +PHP32.19

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RS Stock No.:
653-191
Mfr. Part No.:
SIR4156LDP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

25.7A

Maximum Drain Source Voltage Vds

100V

Series

SIR4156LDP

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.033Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

43W

Typical Gate Charge Qg @ Vgs

8.8nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

5.15 mm

Height

1.72mm

Length

6.15mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver low RDS(on), fast switching, and optimized thermal performance.

Pb Free

Halogen free

RoHS compliant

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