Vishay SIRA12DDP Type N-Channel Single MOSFETs, 81 A, 30 V Enhancement, 8-Pin PowerPAK

N

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PHP25.23

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PHP28.26

(inc. VAT)

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25 - 99PHP22.62
100 - 499PHP20.01
500 - 999PHP17.40
1000 +PHP15.66

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RS Stock No.:
653-145
Mfr. Part No.:
SIRA12DDP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK

Series

SIRA12DDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0036Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

38W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

9.2nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

5.15mm

Width

6.15 mm

Height

1.04mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
TH
The Vishay N-channel MOSFET optimized for high-efficiency switching in Compact power systems. It supports up to 30 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver ultra-low RDS(on), fast switching, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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