Vishay SIR5712DP Type N-Channel Single MOSFETs, 18 A, 150 V Enhancement, 8-Pin PowerPAK SIR5712DP-T1-GE3

N

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Subtotal (1 reel of 3000 units)*

PHP111,954.00

(exc. VAT)

PHP125,388.00

(inc. VAT)

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3000 +PHP37.318PHP111,954.00

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RS Stock No.:
653-110
Mfr. Part No.:
SIR5712DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

150V

Package Type

PowerPAK

Series

SIR5712DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0555Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

5.8nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

40W

Maximum Operating Temperature

150°C

Length

6.15mm

Standards/Approvals

No

Height

1.04mm

Width

5.15 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in power-dense systems. It supports up to 150 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen V technology to deliver low RDS(on), reduced gate charge, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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