Vishay SIS5712DN Type N-Channel Single MOSFETs, 18 A, 150 V Enhancement, 8-Pin PowerPAK SIS5712DN-T1-GE3

N

This image is representative of the product range

View all MOSFETs

Subtotal (1 reel of 3000 units)*

PHP124,647.00

(exc. VAT)

PHP139,605.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
3000 +PHP41.549PHP124,647.00

*price indicative

RS Stock No.:
653-112
Mfr. Part No.:
SIS5712DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

150V

Series

SIS5712DN

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0555Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

39.1W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

5.8nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Length

3.30mm

Standards/Approvals

Lead (Pb)-Free

Width

3.30 mm

Height

1.04mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in power-dense systems. It supports up to 150 V drain-source voltage. Packaged in PowerPAK 1212-8, it utilizes TrenchFET Gen V technology to deliver low RDS(on), reduced gate charge, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

Related links