STMicroelectronics N-Channel STHU65 Type N-Channel MOSFET, 51 A, 650 V N, 7-Pin HU3PAK STHU65N050DM9AG
- RS Stock No.:
- 481-133
- Mfr. Part No.:
- STHU65N050DM9AG
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Subtotal (1 reel of 600 units)*
PHP231,764.40
(exc. VAT)
PHP259,576.20
(inc. VAT)
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- Shipping from April 27, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 600 + | PHP386.274 | PHP231,764.40 |
*price indicative
- RS Stock No.:
- 481-133
- Mfr. Part No.:
- STHU65N050DM9AG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HU3PAK | |
| Series | STHU65 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | N-Channel | |
| Maximum Operating Temperature | 150°C | |
| Height | 3.6mm | |
| Width | 14.1 mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 11.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HU3PAK | ||
Series STHU65 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration N-Channel | ||
Maximum Operating Temperature 150°C | ||
Height 3.6mm | ||
Width 14.1 mm | ||
Standards/Approvals AEC-Q101 | ||
Length 11.9mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The STMicroelectronics N-Channel Power MOSFET is built on cutting-edge super-junction MDmesh DM9 technology, Ideal for medium to high voltage applications. It offers ultra-low RDS(on) per area and integrates a fast-recovery diode. The Advanced silicon-based DM9 process features a multi-drain structure, enhancing overall device performance. With very low recovery charge (Qrr), short recovery time (trr), and minimal RDS(on), this fast-switching MOSFET is perfectly suited for high-efficiency bridge topologies and ZVS phase-shift converters.
Low gate charge and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Excellent switching performance thanks to the extra driving source pin
AEC-Q101 qualified
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