STMicroelectronics STHU47 Type N-Channel MOSFET, 36 A, 600 V, 7-Pin HU3PAK STHU47N60DM6AG
- RS Stock No.:
- 234-8901
- Mfr. Part No.:
- STHU47N60DM6AG
- Manufacturer:
- STMicroelectronics
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|---|---|
| 1 - 9 | PHP404.54 |
| 10 - 99 | PHP396.42 |
| 100 - 249 | PHP388.28 |
| 250 - 499 | PHP380.88 |
| 500 + | PHP373.48 |
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- RS Stock No.:
- 234-8901
- Mfr. Part No.:
- STHU47N60DM6AG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | STHU47 | |
| Package Type | HU3PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Power Dissipation Pd | 250W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series STHU47 | ||
Package Type HU3PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Power Dissipation Pd 250W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
AEC-Q101 qualified
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Related links
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