STMicroelectronics N-Channel STO60 Type N-Channel MOSFET, 79 A, 600 V, 8-Pin TO-LL STO60N030M9
- RS Stock No.:
- 358-978
- Mfr. Part No.:
- STO60N030M9
- Manufacturer:
- STMicroelectronics
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PHP919.90
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PHP1,030.29
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP919.90 |
| 10 - 99 | PHP828.25 |
| 100 + | PHP763.67 |
*price indicative
- RS Stock No.:
- 358-978
- Mfr. Part No.:
- STO60N030M9
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Operating Frequency | 1 MHz | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 79A | |
| Output Power | 255W | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | STO60 | |
| Package Type | TO-LL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | N-Channel | |
| Maximum Operating Temperature | 150°C | |
| Width | 11.88 mm | |
| Length | 10mm | |
| Height | 2.4mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Operating Frequency 1 MHz | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 79A | ||
Output Power 255W | ||
Maximum Drain Source Voltage Vds 600V | ||
Series STO60 | ||
Package Type TO-LL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration N-Channel | ||
Maximum Operating Temperature 150°C | ||
Width 11.88 mm | ||
Length 10mm | ||
Height 2.4mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Very low FOM
Higher VDSS rating
Higher dv by dt capability
Easy to drive
100 percent avalanche tested
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