STMicroelectronics STP50N60DM6 Type N-Channel MOSFET, 36 A, 600 V Enhancement, 8-Pin TO-LL STP50N60DM6

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Subtotal (1 pack of 2 units)*

PHP630.34

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PHP705.98

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP315.17PHP630.34
10 - 18PHP267.505PHP535.01
20 +PHP261.99PHP523.98

*price indicative

Packaging Options:
RS Stock No.:
206-8634
Mfr. Part No.:
STP50N60DM6
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-LL

Series

STP50N60DM6

Mount Type

Through Hole

Pin Count

8

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

55nC

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

28.9mm

Height

4.4mm

Width

10 mm

Automotive Standard

No

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

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